Memory device and method for fabricating the same

ABSTRACT

A memory device is described, including a tunnel dielectric layer over a substrate, a gate over the tunnel dielectric layer, at least one charge storage layer between the gate and the tunnel dielectric layer, two doped regions in the substrate beside the gate, and a word line that is disposed on and electrically connected to the gate and has a thickness greater than that of the gate.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to an integrated circuit (IC) device andfabrication thereof, and more particularly relates to a memory deviceand a method for fabricating the same.

2. Description of Related Art

A memory is a semiconductor device for storing information or data. Asthe computer microprocessors become more and more powerful, programs andoperations executed by the software are increased correspondingly.Consequentially, the demand for high storage capacity memories isgetting more.

Among various types of memory products, a non-volatile memory allowsmulti-time data programming, reading and erasing operations, and thedata stored therein can be retained even after the power to the memoryis terminated. With these advantages, the non-volatile memory has becomeone of the most widely adopted memories for personal computers andelectronic equipment.

Electrically programmable and erasable non-volatile memory technologiesbased on charge storage structures and known as Electrically ErasableProgrammable Read-Only Memory (EEPROM) and flash memory are used invarious modern applications. A flash memory is designed with an array ofmemory cells that can be independently programmed and read. Traditionalflash memory cells store charges in a floating gate, but another type offlash memory uses a charge-trapping structure, such as a layer ofnon-conductive SiN material, instead of a floating gate including aconductive material. When a charge-trapping cell is programmed, chargesare trapped and do not move through the non-conductive layer. Thecharges are retained by the charge trapping layer until the cell iserased, retaining the data state without continuously applied electricalpower. Charge-trapping cells can be operated as two-sided cells. Thatis, because the charges do not move through the non-conductive chargetrapping layer, the charges can be localized on differentcharge-trapping sites. On the other words, in the flash memory deviceswith the use of the charge-trapping structure, more than one bit ofinformation is stored in each memory cell.

A single memory cell can be programmed to store two physically separatedbits in the trapping structure, in the form of a concentration ofcharges near the source and another concentration of charges near thedrain. Programming of the memory cell can be performed by Channel HotElectron (CHE) injection, which generates hot electrons in the channelregion. Some of the hot electrons gain enough energy to be trapped inthe charge-trapping structure. By interchanging the biases applied tothe source and drain terminals, charges are trapped either in a portionof the charge-trapping structure near the source region, near the drainregion, or both.

Usually, one of four distinct combinations of bits 00, 01, 10 and 11 canbe stored in a memory cell having a charge-trapping structure, whereineach combination has a corresponding threshold voltage (Vt). In a readoperation, the current flowing through the memory cell varies dependingupon the Vt of the cell. Typically, such current has one of fourdifferent values each corresponding to a different Vt. Accordingly, bysensing such current, the particular bit combination stored in the cellis determined.

The total available charge range or Vt range may be referred to as thememory operation window. In other words, the memory operation window isdefined by the difference between the program level and the erase level.A large memory operation window is desired as good level separationbetween states is needed for cell operation. The performance of two-bitmemory cells, however, is often degraded by the so-called “second biteffect” in which localized charges in the charge-trapping structureinteract with each other. For example, during a reverse read operation,a read bias is applied to the drain terminal and the charge stored nearthe source region (i.e., a “first bit”) is sensed, then the bit near thedrain region (i.e., the “second bit”), however, creates a potentialbarrier for reading the first bit near the source region. This barriermay be overcome by applying a bias with a suitable magnitude, using thedrain-induced barrier lowering (DIBL) effect to suppress the effect ofthe second bit near the drain region and allow the sensing of thestorage status of the first bit. However, when the second bit near thedrain region is programmed to a high Vt state and the first bit near thesource region is at un-programmed state, the second bit raises thisbarrier substantially. Thus, as the Vt associated with the second bitincreases, the read bias for the first bit becomes insufficient toovercome the potential barrier created thereby, and the Vt associatedwith the first bit is raised as a result of the higher Vt of the secondbit reducing the memory operation window. The second bit effectdecreases the memory operation window for 2-bit/cell operation, so thereis a need for methods and devices capable of suppressing the second biteffect in memory devices.

On the other hand, a known non-volatile memory process includes thefollowing steps. A blanket conductive layer is formed and then patternedinto parallel linear conductive layers through a lithography process anda first etching process, bit lines are formed in the substrate betweenthe linear conductive layers, and a dielectric layer is filled betweenthe linear conductive layers. After word lines are formed, the linearconductive layers not covered by the word lines are removed by a secondetching process so that the conductive layers remaining under the wordlines serve as gates.

However, as shown in FIG. 12 and FIG. 13 as the I-I cross-sectional viewof the structure in FIG. 12, because the linear conductive layersusually have inclined sidewalls to facilitate the dielectric filling,the conductive material on the sidewalls of the dielectric layer 150above the bit lines 100 is not easy to remove in the etching process ofthe linear conductive layer and forms stringers 200 thereat. Thus, thegates under neighboring word lines 300 are shorted with each otherthrough the stringers 200. Hence, the stringer problem also has to besolved.

SUMMARY OF THE INVENTION

Accordingly, this invention provides a memory device that has wellconfined charge storage regions so that the charges stored are fullylocalized to reduce the 2 ^(nd)-bit effect, minimize program disturbancebehaviors and reduce the short channel effect.

This invention also provides a method for fabricating a memory device,which can prevent formation of stringers in etching the linearconductive layers and thereby prevents occurrence of a short circuitbetween neighboring gates.

The memory device of this invention includes a tunnel dielectric layerover a substrate, a gate over the tunnel dielectric layer, at least onecharge storage layer between the gate and the tunnel dielectric layer,two doped regions in the substrate beside the gate, and a word line thatis disposed on and electrically connected to the gate and has athickness greater than that of the gate.

In an embodiment of this invention, the ratio of the thickness of theword line to that of the gate ranges from 5:1 to 10:1. The thickness ofthe gate may range from 100 angstroms to 300 angstroms.

In an embodiment of this invention, the memory device further includes agate dielectric between the gate and the substrate, wherein two gaps arepresent at both sides of the gate dielectric and between the gate andthe substrate, and the at least one charge storage layer is disposed inthe gaps.

A method for fabricating a memory device of this invention includes atleast the following steps. A gate dielectric is formed on a substrateand a conductive layer formed on the gate dielectric, wherein tworecesses are formed at both sides of the gate dielectric and between theconductive layer and the substrate. A liner material layer is formedcovering the surface of the substrate, the sidewalls of the gatedielectric, and the bottom, the sidewalls and the upper surface of theconductive layer, wherein the liner material layer does not fill up therecesses so that two gaps are formed under the conductive layer. Acharge storage material layer is formed on the surface of the linermaterial layer and in the gaps. A conversion process is performed toconvert the charge storage material layer outside of the gaps into aspacer material layer, wherein the charge storage material layer in thegaps remains as a charge storage layer protrudent out of the sidewallsof the conductive layer. The spacer material layer and the linermaterial layer over the conductive layer and the substrate are removedto form a spacer layer and a liner layer on the sidewalls of theconductive layer.

In an embodiment of this invention, the conversion process includes athermal oxidation process.

In an embodiment, removing the spacer material layer and liner materiallayer over the conductive layer and the substrate includes ananisotropic etching process.

Another method for fabricating a memory device of this inventionincludes at least the steps below. A metal-oxide-semiconductor (MOS)structure including a tunnel dielectric layer, a charge storage layerand a conductive layer is formed on a substrate, wherein the chargestorage layer is disposed between the tunnel dielectric layer and theconductive layer. A dielectric layer is formed surrounding the MOSstructure, wherein the surfaces of the dielectric layer and the MOSstructure are substantially coplanar. A portion of the conductive layerand a portion of the dielectric layer are removed to reduce thethickness of the conductive layer. A word line is formed over theconductive layer. The conductive layer not covered by the word line isremoved to form a gate under the word line.

In an embodiment of this invention, the ratio of the thickness of theword line to that of the gate ranges from 5:1 to 10:1.

In an embodiment of this invention, removing a portion of the conductivelayer and a portion of the dielectric layer includes an etching process.

The method for fabricating a memory device of this invention can preventformation of stringers in etching the linear conductive layers through asimple process, thus preventing occurrence of short circuit. Moreover,since the charge storage layers are separated from each other, thememory device of this invention has two well confined charge storageregions so that the charges stored are fully localized to reduce thesecond-bit effect, minimize the program disturbance behaviors and reducethe short channel effect. Such structure of the charge storage layerscan be made by a simple process in the fabricating method of thisinvention.

In order to make the aforementioned and other features and advantages ofthe invention more comprehensible, several embodiments accompanied withfigures are described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-8 illustrate, in a cross-sectional view, a method forfabricating a memory device according to an embodiment of thisinvention.

FIG. 9 illustrates another cross-sectional view of the memory devicefabricated by the process illustrated in FIGS. 1-8.

FIG. 10 illustrates a top view of the memory device illustrated in FIG.8/9, wherein the II-II/III-III cross-sectional view corresponds to FIG.8/9.

FIG. 11 illustrates, in a cross-sectional view, a memory device havingonly one storage region under its gate according to another embodimentof this invention.

FIG. 12 illustrates, in a top view, formation of the short-causingstringers in etching the linear conductive layers in a prior-artsemiconductor device process.

FIG. 13 illustrates the I-I cross-sectional view of the prior-artsemiconductor device illustrated in FIG. 12.

DESCRIPTION OF EMBODIMENTS

The following embodiment is intended to further explain this invention,but is not intended to restrict the scope of this invention.

FIGS. 1-8 illustrate, in a cross-sectional view, a method forfabricating a memory device according to an embodiment of thisinvention, FIG. 9 illustrates another cross-sectional view of the memorydevice, and FIG. 10 illustrates a top view of the same, wherein thecross-sectional view corresponds to FIG. 8/9.

Referring to FIG. 1, a gate dielectric 12 is formed on a substrate 10,and then a blanket conductive layer 14 is formed on the gate dielectric12. The substrate 10 may include a semiconductor material, such as bulksilicon or silicon on insulator (SOI), or a semiconductor compound. Thegate dielectric 12 may include silicon oxide or other suitable material,and may be formed by thermal oxidation, CVD or other suitable method.The conductive layer 14 may include doped poly-Si, and may be formed bydepositing undoped poly-Si through CVD and ion-implanting the same, orby poly-Si CVD with in-situ doping.

Then, a patterned hard mask layer 16 and a patterned mask layer 18 areformed on the conductive layer 14. The hard mask layer 16 may include anadvanced patterning film (APF), and may be formed by CVD. The patternedmask layer 18 may include a photoresist material. The patterns of themask layer 18 can be formed through exposure and development, and thepatterns of the hard mask layer 16 can be transferred from the masklayer 18.

Referring to FIG. 2, an etching process is performed, with the patternedmask layer 18 and hard mask layer 16 as a mask and the substrate 10 asan etching end, to pattern the conductive layer 14 into a plurality ofseparate conductive layers 14 a and successively pattern the gatedielectric 12, so that MOS structures 17 are formed. The etching processmay be an anisotropic etching process. The anisotropic etching processmay be a plasma etching process. Thereafter, the patterned mask layer 18and the patterned hard mask layer 16 are removed. In this embodiment,each conductive layer 14 a has a linear shape in the top view, of whichthe extension direction is substantially parallel with that of the dopedregions 28 and 30 formed later.

Referring to FIG. 3, an isotropic etching process is performed to removea portion of the gate dielectric 12 and produce an undercut under theconductive layer 14 a, so that two recesses 20 are formed at both sidesof the gate dielectric 12 under the gate 14 a as local storage spaces.

Referring to FIG. 4, a liner material layer 22 is formed covering thetop surface, the sidewalls and the exposed bottoms of each conductivelayer 14 a, the sidewalls of the gate dielectric 12, and the exposedsurfaces of the substrate 10. In an embodiment, the liner material layer22 conformally covers the top surface, the sidewalls and the exposedbottoms of each conductive layer 14 a, the sidewalls of the gatedielectric 12, and the exposed surfaces of the substrate 10. The linermaterial layer 22 fills in the recesses 20 (FIG. 3) but does not fill upthe same, so that two gaps 20 a remain in the recesses 20. The linermaterial layer 22 may include silicon oxide, may be formed throughthermal oxidation, ISSG (in-situ steam generation) oxidation, CVD,atomic layer deposition (ALD) or furnace oxidation.

Then, a charge storage material layer 24 is formed, covering the linermaterial layer 22 on the top surfaces and the sidewalls of eachconductive layer 14 a and on the substrate 10, and filling up the gaps20 a. The charge storage material layer 24 may include silicon nitride(SiN) or doped poly-Si. SiN may be formed through furnace deposition,LPCVD or ALD. Doped poly-Si may be formed by poly-Si CVD with in-situdoping.

Referring to FIG. 5, a conversion process is performed to convert thecharge storage material layer 24 outside of the gaps 20 a into a spacermaterial layer 26, such that the charge storage material layer 24 in thegaps 20 remains to serve as charge storage layers 24 a. The conversionprocess can be arbitrary process capable of making the material of thespacer material layer 26 different from that of the charge storagematerial layer 24. In an embodiment, the charge storage material layer24 includes SiN, the spacer material layer 26 includes silicon oxide,and the conversion process may be a thermal oxidation process.

Referring to FIG. 6, the spacer material layer 26 and the liner materiallayer 22 are anisotropically etched to form spacer layers 26 a, exposingthe top surface of each conductive layer 14 a and surfaces of thesubstrate 10. The charge storage layers 24 a disposed in the gaps 20 aprotrude out of the sidewalls of the conductive layer 14 a.

The remaining liner material layer 22 includes three portions 22 a, 22 band 22 c. The first portion 22 a of the liner material layer 22 isbetween the substrate 10 and the charge storage layer 24 a, serving as atunnel dielectric layer. The second portion 22 b is under the conductivelayer 14 a and between the conductive layer 14 a and the charge storagelayer 24 a, serving as a top dielectric layer. The third portion 22 c ison the sidewall of the conductive layer 14 a, and is between theconductive layer 14 a and the spacer layer 26 a to serve as a linerlayer. Each spacer layer 26 a is on the sidewalls of the correspondingconductive layer 14 a, liner layer 22 c and charge storage layer 24 a.

An ion-implantation process is then performed to form doped regions 28and 30 in the substrate 10 beside the conductive layer 14 a. The dopantimplanted in the dope region 28 and the dopant implanted in the dopedregion 30 have the same conductivity type, being different from theconductivity type of the substrate 10. In an embodiment, the substrate10 is P-doped and the doped regions 28 and 30 are N-doped. In anotherembodiment, the substrate 10 is N-doped and the doped regions 28 and 30are P-doped. The N-type dopant may be phosphorus or arsenic. The P-typedopant may be boron or boron difluoride. The doped regions 28 and 30 canserve as a source region and a drain region of a memory cell. The dopedregions 28 and 30 are disposed in the substrate 10 beside the conductivelayer 14 a, wherein each charge storage layer 24 a has a portion locatedabove the corresponding doped region 28 or 30.

Thereafter, a dielectric layer 32 is formed over the substrate 10,filling up the gaps between the conductive layers 14 a to form a planarsurface, and exposing the top surfaces of the conductive layers 14 a.The dielectric layer 32 may include silicon oxide, and may be formed bydepositing a dielectric material layer through CVD and then planarizingthe same. The planarization may utilize etching-back or CMP.

Referring to FIG. 7, a thinning process is performed to remove a portionof each conductive layer 14 a, a portion of the dielectric layer 32, aportion of each liner layer 22 c and a portion of each spacer layer 26 ato form much thinner conductive layers 14 b, a thinner dielectric layer32 a, shorter liner layers 22 c′ and shorter spacer layers 26 a. Theplanarization of this step may include an anisotropic etching processwith a low etching selectivity ratio between the conductive layers 14 aand the dielectric layer 32. In addition, the thickness of theconductive layer 14 b after the thinning process may be 300 angstroms orless, possibly from 100 angstroms to 300 angstroms.

Referring to FIG. 8 and FIG. 9 illustrating another cross-sectional viewof the memory device to be formed, a word line 34 is formed on the thindielectric layer 32 a and on the thin conductive layers 14 b. In anembodiment, the extension direction of the word line 34 is differentfrom that of the doped regions 28 and 30, and may be substantiallyperpendicular to the latter. The word line 34 may be formed bydepositing a blanket conductive material layer and then patterning thesame through lithography and etching. The word line 34 includes aconductive material, which may be doped poly-Si, metal, metal alloy, ora combination thereof. Doped poly-Si may be formed by poly-Si CVD within-situ doping. The metal or metal alloy may be formed by sputtering orCVD, or other suitable method.

After the word lines 34 are formed by etching, the thin conductivelayers 14 b not covered by the word lines 34 are successively removed inthe same or different etching chamber, so that the thin conductivelayers 14 b are patterned into a plurality of gates 14 c under the wordlines 34, as shown in FIG. 8 and FIG. 10 that illustrates a top view ofthe memory device illustrated in FIG. 8/9, wherein the cross-sectionalview corresponds to FIG. 8/9. The word lines 34 are electricallyconnected to the gates 14 c, and between the word lines 34 the thindielectric layer 32 a, the gate dielectric 12 and the liner materiallayer 22′ are exposed, as shown in FIGS. 9-10. Because the thickness ofthe thin conductive layers 14 b is quite small, the conductive layers 14b not covered by the word lines 34 can be entirely removed easily sothat there is no residue of the conductive layers 14 b thereat and ashort circuit is prevented. The thickness of the word lines 34 is largerthan that of the gates 14 c. In an embodiment, the ratio of thethickness of the word lines 34 to that of the gates 14 c may range from5:1 to 10:1.

Referring to FIGS. 8-10 again, the memory device according to thisembodiment of this invention includes a gate 14 c, a gate dielectric 12,a liner material layer 22′, two charge storage layers 24 a, two dopedregions 28 and 30, and a word line 34.

The gate 14 c is disposed on the substrate 10. The gate dielectric 12 isbetween the gate 14 c and the substrate 10. The width of the gatedielectric 12 is smaller than that of the gate 14 c in a symmetricmanner, so that two gaps 20 a are present at both sides of the gatedielectric 12 and between the gate 14 c and the substrate 10.

The material of the two charge storage layers 24 a is different fromthat of the gate dielectric 12. Each charge storage layer 24 a protrudesout of the corresponding sidewall of the gate 14 c.

The liner material layer 22′ includes a tunnel dielectric layer 22 a, atop dielectric layer 22 b and a liner layer 22 c′. The tunnel dielectriclayer 22 a is disposed between the charge storage layer 24 a and thesubstrate 10. The top dielectric layer 22 b is disposed under the gate14 c and is between the gate 14 c and the charge storage layer 24 a. Theliner layer 22 c′ is disposed on a sidewall of the gate 14 c and betweenthe gate 14 c and the spacer layer 26 a. The spacer layer 26 a isdisposed on the sidewalls of the liner layer 22 c′ and the chargestorage layer 24 a. In an embodiment, the material of the tunneldielectric layers 22 a, the top dielectric layers 22 b, the liner layers22 c′ and the spacer layers 26 a is different from that of the chargestorage layers 24 a.

The doped regions 28 and 30 are located in the substrate 10 at bothsides of the gate 14 c, each having a portion extending to below theneighboring charge storage layers 24 a. The dopant implanted in the doperegion 28 and that implanted in the doped region 30 have the sameconductivity type, being different from the conductivity type of thesubstrate 10.

The word line 34 is electrically connected to the gate 14 c. Thethickness of the word line 34 is larger than that of the gate 14 c. Inan embodiment, the ratio of the thickness of the word line 34 to that ofthe gate 14 c may range from 5:1 to 10:1.

Although there are two separated charge storage regions under each gatein the above embodiment, this invention is not limited to such case. Theconcept of partially removing the conductive layers as the precursor ofthe gates to reduce the thickness of the gates formed later can also beapplied to, for example, a case where only one storage region is undereach gate, as shown in FIG. 11.

Referring to FIG. 11, the memory device according to another embodimentof this invention includes a gate 114 c, a tunnel dielectric layer 122a, a top dielectric layer 122 b, a charge storage layer 124 with onlyone charge storage region, doped regions 128 and 130, and a word line134. The materials of the gate 114 c, the tunnel dielectric layer 122 a,the top dielectric layer 122 b, the charge storage layer 124, the dopedregions 128 and 130 and the word line 134 may be similar to those of thegate 14 c, the tunnel dielectric layer 22 a, the top dielectric layer 22b, the charge storage layer 24 a, the doped regions 28 and 30 and theword line 34 in the precedent embodiment of this invention.

The memory device shown in FIG. 11 may be fabricated by the followingsteps. A MOS structure is formed, including the tunnel dielectric layer122 a, the charge storage layer 124, the top dielectric layer 122 b, anda conductive layer for forming the gate 114 c. After the MOS structureis patterned into linear structures by anisotropic etching, ionimplantation is done to form the doped regions 128 and 130 in thesubstrate 110. After the dielectric layer 132 a is formed as above, athinning process is performed as above, and then the word line 134 isformed. The thinned linear conductive layer not covered by the word line134 is removed, wherein the remaining linear conductive layer under theword line 134 serves as the gate 114 c.

Since the two charge storage layers are separated from each other, thememory device of this invention has two well confined charge storageregions so that the charges stored are fully localized to reduce the2^(nd)-bit effect, minimize the program disturbance behaviors and reducethe short channel effect. Moreover, by reducing the thickness of thelinear conductive layers as the precursor of the gates, the method forfabricating a memory device of this invention can prevent formation ofstringers in etching the linear conductive layers, thereby effectivelypreventing a short circuit.

This invention has been disclosed above in the preferred embodiments,but is not limited to those. It is known to persons skilled in the artthat some modifications and innovations may be made without departingfrom the spirit and scope of this invention. Hence, the scope of thisinvention should be defined by the following claims.

1. A memory device, comprising: a tunnel dielectric layer over asubstrate; a gate over the tunnel dielectric layer; at least one chargestorage layer between the gate and the tunnel dielectric layer; twodoped regions in the substrate beside the gate; and a word line,disposed on and electrically connected to the gate, and having athickness greater than a thickness of the gate.
 2. The memory device ofclaim 1, wherein a ratio of the thickness of the word line to thethickness of the gate ranges from 5:1 to 10:1.
 3. The memory device ofclaim 2, wherein the thickness of the gate ranges from 100 angstroms to300 angstroms.
 4. The memory device of claim 1, further comprising agate dielectric between the gate and the substrate, wherein two gaps arepresent at both sides of the gate dielectric and between the gate andthe substrate, and the at least one charge storage layer is disposed inthe gaps.
 5. A method for fabricating a memory device, comprising:forming a gate dielectric on a substrate and a conductive layer on thegate dielectric, wherein two recesses are formed at both sides of thegate dielectric and between the conductive layer and the substrate;forming a liner material layer covering a surface of the substrate,sidewalls of the gate dielectric, and a bottom, sidewalls and an uppersurface of the conductive layer, wherein the liner material layer doesnot fill up the recesses so that two gaps are formed under theconductive layer; forming a charge storage material layer on a surfaceof the liner material layer and in the gaps; performing a conversionprocess to convert the charge storage material layer outside of the gapsinto a spacer material layer, wherein the charge storage material layerin the gaps remains as a charge storage layer protrudent out of thesidewalls of the conductive layer; and removing the spacer materiallayer and the liner material layer above the conductive layer and thesubstrate to form a spacer layer and a liner layer on the sidewalls ofthe conductive layer.
 6. The method of claim 5, wherein the conversionprocess comprises a thermal oxidation process.
 7. The method of claim 5,wherein removing the spacer material layer and the liner material layerover the conductive layer and the substrate comprises an anisotropicetching process.
 8. A method for fabricating a memory device,comprising: forming, on a substrate, a metal-oxide-semiconductor (MOS)structure including a tunnel dielectric layer, a charge storage layerand a conductive layer, wherein the charge storage layer is disposedbetween the tunnel dielectric layer and the conductive layer; forming adielectric layer surrounding the MOS structure, wherein surfaces of thedielectric layer and the MOS structure are substantially coplanar;removing a portion of the conductive layer and a portion of thedielectric layer to reduce a thickness of the conductive layer; forminga word line over the conductive layer; and removing the conductive layernot covered by the word line to form a gate under the word line.
 9. Themethod of claim 8, wherein a ratio of the thickness of the word line tothe thickness of the gate ranges from 5:1 to 10:1.
 10. The method ofclaim 8, wherein removing a portion of the conductive layer and aportion of the dielectric layer comprises an etching process.
 11. Amemory device, comprising: a gate dielectric over a substrate; a gateover the gate dielectric, being wider than the gate dielectric so thattwo gaps are present at both sides of the gate dielectric and betweenthe gate and the substrate; a tunnel dielectric layer on the substratein each of the gaps; a charge storage layer on the tunnel dielectriclayer in each of the gaps; a top dielectric layer on the charge storagelayer in each of the gaps; a liner layer on sidewalls of the gate andover an end portion of the charge storage layer; two doped regions inthe substrate beside the gate; and a word line, disposed on andelectrically connected to the gate.
 12. The memory device of claim 11,wherein the word line has a thickness greater than a thickness of thegate.
 13. The memory device of claim 12, wherein a ratio of thethickness of the word line to the thickness of the gate ranges from 5:1to 10:1.
 14. The memory device of claim 13, wherein the thickness of thegate ranges from 100 angstroms to 300 angstroms.
 15. The memory deviceof claim 11, further comprising: a spacer layer on a sidewall of thecharge storage layer and a sidewall of the liner layer.